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[PDF]由等价掺杂转换理论得到非对称线性缓变P_N结的击穿特性_英文

资料大小:0.15 MB 上传日期:2013-05-24 界面语言:简体中文 文件类型:pdf

This report describes an equivalent doping profile transformation method with which the avalanche break-down voltage of the asymm etric linearly graded junction was analytically predict ed. The maximum breakdown volt-age and the different depletion layer extension on the diffused side and substrate side are demonstrated in the re-port • The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the com-plex P-N junction. The analytical results agree with the experimental break dow n voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.

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